SiC MOSFET

安海半导体推出基于世界领先的车规级平面高密度工艺与沟槽工艺的第三代宽禁带功率半导体碳化硅SIC MOSFET产品,产品性能:高频率、高功率、高效率、低导通电阻优点。具有电流密度高、开关速度快、浪涌和短路能力强等优点,电压覆盖1200V、1700V、1900V,典型应用领域为新能源汽车、充电桩、工业电源、光伏逆变、储能电源、风力发电、轨道交通等。在应用上更能满足充电桩高效率和高功率密度的性能要求。

产品选型

Class Product Name Package BVds[V] Id [A]25℃ Vgs(th)[Typ V] Rds(on) /mohm Vgs=10V Qg [nC]at 10V Features
Typ. Max.
1200V Family
ASA65R120EFD TO-220F 650 30 3.7 105 120 58.3 Super Junction Fast Recovery
ADW065N028AH TO247-3L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADQ065N028AH TO-247-4L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADR065N028AH TOLL 8L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADJ120N080G2 TO263-7L-LF/T2PAK-7R 1200 35 2.8 80 100 58 SIC MOSFET G2
ADW120N040BH TO247-3L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADQ120N040BH TO-247-4L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADG120N040BH TO-263-7L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADM120N040BH DFN8*8 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADW120N016AG TO247-3L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016AG TO-247-4L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016BG TO247-3L 1200 131 2.0 17 25 203 SIC MOSFET G3
ADQ120N016BG TO-247-4L 1200 131 2.0 17 25 203 SIC MOSFET G3
ADG120N016BG TO-263-7L 1200 131 2.0 17 25 203 SIC MOSFET G3
AI3F02R12HPDB HPD 1200 400 3.0 2.58 3.1 1310 SIC MOSFET G3
AI1F02R12DCM DCM 1200 400 2.9 5.9 6.5 2010 SIC MOSFET G3
AIS08R12TK STPAK 1200 230 2.9 9.2 12 301 SIC MOSFET G3
AI3F02R12HPD Module 1200 400 3.0 2.55 3.1 1.35 SIC MOSFET
AI3F02R12HPD Module 1200 400 3.0 2.55 3.1 1350 SIC MOSFET
ADK120N015 Module 1200 200 2.5 15 17 520 SIC MOSFET
ADQ120N040L TO-247-4L 1200 77 2.5 35 45 176 SIC MOSFET
ADW120N040L TO-247-3L 1200 77 2.5 35 45 176 SIC MOSFET
ADQ120N040 TO-247-4L 1200 72 3.2 40 45 176 SIC MOSFET
ADW120N040 TO-247-3L 1200 72 3.2 40 45 176 SIC MOSFET
ADQ120N040G2 TO-247-4L 1200 68 2.7 40 45 103 SIC MOSFET G2
ADG120N080 TO-263-7L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N100 TO-247-4L 1200 35 3.2 100 120 70 SIC MOSFET
ADQ120N080A TO-247-4L 1200 35 3.7 80 130 79.2 SIC MOSFET
ADW120N080G2 TO-247-3L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADQ120N080G2 TO-247-4L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADG120N080G2 TO-263-7L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADW120N080 TO-247-3L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N080 TO-247-4L 1200 38 3.5 80 100 88 SIC MOSFET
1700V Family
ADQ170N022BG TO-247-4L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADW170N022BG TO247-3L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADQ170N100 TO-247-4L 1700 29 2.7 100 130 74 SIC MOSFET
ADQ170N055 TO-247-4L 1700 40 2.7 55 70 103 SIC MOSFET
1900V Family ADQ190N065 TO-247-4L 1900 35 2.7 65 80 88 SIC MOSFET

SJ MOSFET

安海半导体推出新一代SJ MOSFET系列,采用先进的多层外延技术,优化了元胞结构,具有电流能力强,短路能力好,雪崩特性强,体内二极管反向恢复特性优,dv/dt能力优,EMI特性好,抗浪涌能力强的等特点和优点。 基于电荷平衡,超结核心是pillar柱与N-EPI 电荷平衡,在击穿状态下,完全耗尽。DeepTrench工艺,由于Pillar柱一次形成,无法对Pillar浓度做调整。 而多层外延技术,则可以分步进行调整,使器件的鲁棒性更强,更宽的SOA区间,具有优异的EMI及抗浪涌能力,性能更加稳定。 主要应用于电子产品充电器,LED照明,车载OBC,充电桩,光伏逆变,DC-DC电源等行业。

产品选型

Class Product Name Package BVds[V] Id [A]25℃ Vgs(th)[Typ V] Rds(on) /mohm Vgs=10V Qg [nC]at 10V Features
Typ. Max.
1200V Family
ASA65R120EFD TO-220F 650 30 3.7 105 120 58.3 Super Junction Fast Recovery
ADW065N028AH TO247-3L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADQ065N028AH TO-247-4L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADR065N028AH TOLL 8L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADJ120N080G2 TO263-7L-LF/T2PAK-7R 1200 35 2.8 80 100 58 SIC MOSFET G2
ADW120N040BH TO247-3L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADQ120N040BH TO-247-4L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADG120N040BH TO-263-7L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADM120N040BH DFN8*8 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADW120N016AG TO247-3L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016AG TO-247-4L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016BG TO247-3L 1200 131 2.0 17 25 203 SIC MOSFET G3
ADQ120N016BG TO-247-4L 1200 131 2.0 17 25 203 SIC MOSFET G3
ADG120N016BG TO-263-7L 1200 131 2.0 17 25 203 SIC MOSFET G3
AI3F02R12HPDB HPD 1200 400 3.0 2.58 3.1 1310 SIC MOSFET G3
AI1F02R12DCM DCM 1200 400 2.9 5.9 6.5 2010 SIC MOSFET G3
AIS08R12TK STPAK 1200 230 2.9 9.2 12 301 SIC MOSFET G3
AI3F02R12HPD Module 1200 400 3.0 2.55 3.1 1.35 SIC MOSFET
AI3F02R12HPD Module 1200 400 3.0 2.55 3.1 1350 SIC MOSFET
ADK120N015 Module 1200 200 2.5 15 17 520 SIC MOSFET
ADQ120N040L TO-247-4L 1200 77 2.5 35 45 176 SIC MOSFET
ADW120N040L TO-247-3L 1200 77 2.5 35 45 176 SIC MOSFET
ADQ120N040 TO-247-4L 1200 72 3.2 40 45 176 SIC MOSFET
ADW120N040 TO-247-3L 1200 72 3.2 40 45 176 SIC MOSFET
ADQ120N040G2 TO-247-4L 1200 68 2.7 40 45 103 SIC MOSFET G2
ADG120N080 TO-263-7L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N100 TO-247-4L 1200 35 3.2 100 120 70 SIC MOSFET
ADQ120N080A TO-247-4L 1200 35 3.7 80 130 79.2 SIC MOSFET
ADW120N080G2 TO-247-3L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADQ120N080G2 TO-247-4L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADG120N080G2 TO-263-7L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADW120N080 TO-247-3L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N080 TO-247-4L 1200 38 3.5 80 100 88 SIC MOSFET
1700V Family
ADQ170N022BG TO-247-4L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADW170N022BG TO247-3L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADQ170N100 TO-247-4L 1700 29 2.7 100 130 74 SIC MOSFET
ADQ170N055 TO-247-4L 1700 40 2.7 55 70 103 SIC MOSFET
1900V Family ADQ190N065 TO-247-4L 1900 35 2.7 65 80 88 SIC MOSFET

应用方案

便捷式储能应用

SGT MOSFET

安海半导体为客户提供了丰富的低压MOSFET产品,采用先进的 SGT MOS技术,极低的 FOM[RDS(on)xQg] 实现了低的导通和开关损耗,便于客户提高产品效率,做到更高的功率密度。优秀的EAS和SOA参数便于客户产 品适应不同的负载应用。-40°C-150°C的工作结温,便于客户产品在不同工作环境温度的应用。

产品选型

Class Product Name Package BVds[V] Id [A]25℃ Vgs(th)[Typ V] Rds(on) /mohm Vgs=10V Qg [nC]at 10V Features
Typ. Max.
1200V Family
ASA65R120EFD TO-220F 650 30 3.7 105 120 58.3 Super Junction Fast Recovery
ADW065N028AH TO247-3L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADQ065N028AH TO-247-4L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADR065N028AH TOLL 8L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADJ120N080G2 TO263-7L-LF/T2PAK-7R 1200 35 2.8 80 100 58 SIC MOSFET G2
ADW120N040BH TO247-3L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADQ120N040BH TO-247-4L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADG120N040BH TO-263-7L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADM120N040BH DFN8*8 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADW120N016AG TO247-3L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016AG TO-247-4L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016BG TO247-3L 1200 131 2.0 17 25 203 SIC MOSFET G3
ADQ120N016BG TO-247-4L 1200 131 2.0 17 25 203 SIC MOSFET G3
ADG120N016BG TO-263-7L 1200 131 2.0 17 25 203 SIC MOSFET G3
AI3F02R12HPDB HPD 1200 400 3.0 2.58 3.1 1310 SIC MOSFET G3
AI1F02R12DCM DCM 1200 400 2.9 5.9 6.5 2010 SIC MOSFET G3
AIS08R12TK STPAK 1200 230 2.9 9.2 12 301 SIC MOSFET G3
AI3F02R12HPD Module 1200 400 3.0 2.55 3.1 1.35 SIC MOSFET
AI3F02R12HPD Module 1200 400 3.0 2.55 3.1 1350 SIC MOSFET
ADK120N015 Module 1200 200 2.5 15 17 520 SIC MOSFET
ADQ120N040L TO-247-4L 1200 77 2.5 35 45 176 SIC MOSFET
ADW120N040L TO-247-3L 1200 77 2.5 35 45 176 SIC MOSFET
ADQ120N040 TO-247-4L 1200 72 3.2 40 45 176 SIC MOSFET
ADW120N040 TO-247-3L 1200 72 3.2 40 45 176 SIC MOSFET
ADQ120N040G2 TO-247-4L 1200 68 2.7 40 45 103 SIC MOSFET G2
ADG120N080 TO-263-7L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N100 TO-247-4L 1200 35 3.2 100 120 70 SIC MOSFET
ADQ120N080A TO-247-4L 1200 35 3.7 80 130 79.2 SIC MOSFET
ADW120N080G2 TO-247-3L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADQ120N080G2 TO-247-4L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADG120N080G2 TO-263-7L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADW120N080 TO-247-3L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N080 TO-247-4L 1200 38 3.5 80 100 88 SIC MOSFET
1700V Family
ADQ170N022BG TO-247-4L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADW170N022BG TO247-3L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADQ170N100 TO-247-4L 1700 29 2.7 100 130 74 SIC MOSFET
ADQ170N055 TO-247-4L 1700 40 2.7 55 70 103 SIC MOSFET
1900V Family ADQ190N065 TO-247-4L 1900 35 2.7 65 80 88 SIC MOSFET

IGBT

安海半导体可提供大电流系列的IGBT产品,产品工作频率覆盖20〜50KHZ的应用,具备静动态损耗低、短路耐受力强的特点, 可靠性高。产品优势:更窄的mesa设计,更优化的沟槽组合设计,更高的可靠性设计,严格参照车规级要求。 产品性能:更快的开关速度,应用频率达60KHz,更高的电流密度,可达400A/cm-2。 产品应用:OBC、充电桩、焊机、开关电源、光伏逆变器、储能等。

产品选型

Class Product Name Package V(BR)CES[V] Ic [A]100℃ VCE(sat)[Typ V] VGE(th)[Typ V] Eoff [mj] VF [Typ V] Features
1200V Family
ASA65R120EFD TO-220F 650 30 3.7 105 120 58.3 Super Junction Fast Recovery
ADW065N028AH TO247-3L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADQ065N028AH TO-247-4L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADR065N028AH TOLL 8L 650 80 2.8 30 35 97.6 SIC MOSFET G3
ADJ120N080G2 TO263-7L-LF/T2PAK-7R 1200 35 2.8 80 100 58 SIC MOSFET G2
ADW120N040BH TO247-3L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADQ120N040BH TO-247-4L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADG120N040BH TO-263-7L 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADM120N040BH DFN8*8 1200 50.4 3.3 40 45 105 SIC MOSFET G3
ADW120N016AG TO247-3L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016AG TO-247-4L 1200 131 2.5 18 25 237.9 SIC MOSFET G3
ADW120N016BG TO247-3L 1200 131 2.0 17 25 203 SIC MOSFET G3
ADQ120N016BG TO-247-4L 1200 131 2.0 17 25 203 SIC MOSFET G3
ADG120N016BG TO-263-7L 1200 131 2.0 17 25 203 SIC MOSFET G3
AI3F02R12HPDB HPD 1200 400 3.0 2.58 3.1 1310 SIC MOSFET G3
AI1F02R12DCM DCM 1200 400 2.9 5.9 6.5 2010 SIC MOSFET G3
AIS08R12TK STPAK 1200 230 2.9 9.2 12 301 SIC MOSFET G3
AI3F02R12HPD Module 1200 400 3.0 2.55 3.1 1.35 SIC MOSFET
AI3F02R12HPD Module 1200 400 3.0 2.55 3.1 1350 SIC MOSFET
ADK120N015 Module 1200 200 2.5 15 17 520 SIC MOSFET
ADQ120N040L TO-247-4L 1200 77 2.5 35 45 176 SIC MOSFET
ADW120N040L TO-247-3L 1200 77 2.5 35 45 176 SIC MOSFET
ADQ120N040 TO-247-4L 1200 72 3.2 40 45 176 SIC MOSFET
ADW120N040 TO-247-3L 1200 72 3.2 40 45 176 SIC MOSFET
ADQ120N040G2 TO-247-4L 1200 68 2.7 40 45 103 SIC MOSFET G2
ADG120N080 TO-263-7L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N100 TO-247-4L 1200 35 3.2 100 120 70 SIC MOSFET
ADQ120N080A TO-247-4L 1200 35 3.7 80 130 79.2 SIC MOSFET
ADW120N080G2 TO-247-3L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADQ120N080G2 TO-247-4L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADG120N080G2 TO-263-7L 1200 35 2.8 80 100 58 SIC MOSFET G2
ADW120N080 TO-247-3L 1200 38 3.5 80 100 88 SIC MOSFET
ADQ120N080 TO-247-4L 1200 38 3.5 80 100 88 SIC MOSFET
1700V Family
ADQ170N022BG TO-247-4L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADW170N022BG TO247-3L 1700 113 2.0 25 35 220 SIC MOSFET G3
ADQ170N100 TO-247-4L 1700 29 2.7 100 130 74 SIC MOSFET
ADQ170N055 TO-247-4L 1700 40 2.7 55 70 103 SIC MOSFET
1900V Family ADQ190N065 TO-247-4L 1900 35 2.7 65 80 88 SIC MOSFET